Released on: October 23, 2007, 6:51 am

Press Release Author: GeneSiC Semiconductor Inc.

Industry: Semiconductors

Press Release Summary: GeneSiC Semiconductor Inc., a key innovator of Silicon
Carbide (SiC) devices for high temperature, high power, ultra-high voltage, and
detector applications, announces that it won three Small Business Grants from the US
Department of Energy during FY07. These grants allow GeneSiC to be able to
demonstrate high voltage SiC devices for a variety of Energy Storage, High Energy
Physics and Power Grid applications.

Press Release Body: The Projects are as follows:
. Continuing on the success achieved in its FY06 Phase I SBIR grant, the Office of
Science of the US Dept of Energy has selected GeneSiC's Phase II SBIR grant
proposal, and has completed the award formalities. This project is focused on
developing multi-kV radio-frequency (RF) SiC power devices for High Energy Physics
applications.
. A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices
was granted in FY07. This project is geared towards Energy Storage applications.
. A FY07 Phase I STTR award focused on optically gated high voltage, high frequency
SiC power devices for environments rich in electro-magnetic interference.
\"We are pleased with the confidence expressed by various offices within the US
Department on Energy in our high power device solutions. These projects will enable
GeneSiC to develop industry-leading SiC devices through its unique device solutions\"
said Dr. Ranbir Singh, GeneSiC's President. \"Devices being developed in these
programs will be critical towards a more-efficient power grid, and will enable
critical commercial and military hardware, not yet possible due to the limitations
of contemporary Silicon based technologies.\"
GeneSiC recently moved into a new 5800 sqft laboratory and office building in
Dulles, Virginia with significantly upgraded equipment and personnel infrastructure.
The company is aggressively hiring personnel experienced in compound semiconductor
device fabrication, power device design and semiconductor detector designs.
Additional information about the company and its products may be obtained by calling
GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor
devices for high temperature, radiation, and power grid applications. This includes
development of rectifiers, FETs, bipolar devices as well as particle & photonic
detectors. GeneSiC has, or has access to a extensive suite of device design,
fabrication, characterization and testing facilities for such devices. GeneSiC
capitalizes on its core competency in device and process design to develop the best
possible SiC devices for its customers. The company distinguishes itself by
providing high quality products with a focus on customer\'s requirements. GeneSiC has
prime/sub-contracts from major US Government agencies including US Dept of Energy,
Navy, DARPA, Dept of Homeland Security and DTRA.


Web Site: http://www.genesicsemi.com

Contact Details: 43670 Trade Center Place
Suite 155
Dulles, VA 20166
703-996-8200 (ph)
703-373-6918 (fax)
Info@genesicsemi.com